Effect of lateral dimensional scaling on the thermal stability of thin CoSi2 layers reacted on polycrystalline silicon
- 1 March 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 18 (2) , 717-720
- https://doi.org/10.1116/1.591265
Abstract
The thermal stability of patterned cobalt silicide layers grown on polycrystalline silicon was studied by electrical and morphological analyses in the temperature range of 850–1000 °C. The strip degradation upon annealing resulted in a faster resistance increase than that in blanket films, and occurred from preferential agglomeration of the grains located at the strip edges. An activation energy for this process of 3.5 eV was obtained by the increase in resistance and attributed to the growth of silicon grains from the substrate that protruded into the silicide layer.Keywords
This publication has 20 references indexed in Scilit:
- Electrical characterization of ultra-shallow junctions formed by diffusion from a CoSi/sub 2/ layerIEEE Transactions on Electron Devices, 1997
- Formation and stability of silicides on polycrystalline siliconMaterials Science and Engineering: R: Reports, 1996
- Thermal stability of silicide on polycrystalline SiThin Solid Films, 1994
- Electrical evaluation of high-temperature effects on gate oxide integrity in a self-aligned CoSi2 MOS processApplied Surface Science, 1993
- Structure and defect characterization of epitaxial CoSi2 on Si(001) formed using an amorphous Co75W25 sputtered layerJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Thermal Stability of Thin Submicrometer Lines of CoSi2Journal of the Electrochemical Society, 1993
- Resistance and structural stabilities of epitaxial CoSi2 films on (001) Si substratesJournal of Applied Physics, 1992
- Epitaxial CoSi2 formation on Si(001) from an amorphous Co75W25 sputtered layerJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Growth of epitaxial CoSi2 on (100)SiApplied Physics Letters, 1991
- Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/IEEE Transactions on Electron Devices, 1991