Degradation of Gate Oxide Integrity by Metal Impurities
- 1 December 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (12A) , L2109
- https://doi.org/10.1143/jjap.28.l2109
Abstract
The degradation of gate oxide integrity (GOI) by metal impurities on Si wafers was studied. Ni and Cu tended to precipitate at the Si surface after high-temperature annealing. When these precipitates existed before gate oxidation, they penetrated into the gate oxide film and degraded GOI. Fe tended to remain in the oxide film after oxidation and degraded GOI. The degradation was observed for annealed samples when the surface metal concentration exceeded 1.0×1012 atoms/cm2 of Ni or 5.0×1012 atoms/cm2 of Cu. It was also observed with contamination of 1.0×1013 atoms/cm2 of Fe without annealing.Keywords
This publication has 6 references indexed in Scilit:
- TEM Observation of Defects Induced by Ni Contamination on a Si(100) SurfaceJapanese Journal of Applied Physics, 1989
- Determination of metallic impurities on the surface of silicon wafers.BUNSEKI KAGAKU, 1989
- A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon WaferJapanese Journal of Applied Physics, 1988
- Catastrophic breakdown in silicon oxides: The effect of Fe impurities at the SiO2-Si interfaceJournal of Applied Physics, 1987
- Internal Gettering in Bipolar Process: Effect on Circuit Performance and Relationship to Oxygen Precipitation KineticsJournal of the Electrochemical Society, 1984
- Leakage and Breakdown in Thin Oxide Capacitors—Correlation with Decorated Stacking FaultsJournal of the Electrochemical Society, 1983