Molecular-dynamics simulations ofSiH3radical deposition on hydrogen-terminated silicon (100) surfaces

We have performed molecular-dynamics simulations using realistic many-body semiclassical potentials for hydrosilicon interactions to investigate the deposition and diffusion dynamics of thermal to hyperthermal ${\mathrm{SiH}}_3$ radicals on hydrogen-terminated silicon (100) surfaces. We have studied the radical diffusion length as a function of different incident radical energies to know the effect of the radical energization on the radical diffusion upon a substrate. As a result of the deposition and diffusion dynamics simulation using 100 radicals, it was observed that when radicals having an incident kinetic energy of about 700 K adsorb vertically on a substrate with high hydrogen coverage, the average diffusion length is the largest and the value is about 32 Å. It was found that the incident energized radical has an optimum energy to maximize the radical diffusion length on a substrate under some conditions.