Distribution of interfacial As atoms in the electron-beam exposure and epitaxy (EBE-epitaxy) technique for growing GaAs films on CaF2/Si(111) structures
- 1 January 1990
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 41-42, 553-558
- https://doi.org/10.1016/0169-4332(89)90121-9
Abstract
No abstract availableKeywords
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