Contact metallurgy optimization for ohmic contacts to InP
- 31 October 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 15 (1-4) , 157-160
- https://doi.org/10.1016/0167-9317(91)90203-p
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Characterization of Zn/Au back contact to low-doped p-InPSemiconductor Science and Technology, 1990
- The addition of Ni in AuZn gate Ohmic contacts for InP junction field effect transistorsJournal of Vacuum Science & Technology B, 1989
- AuGeNi ohmic contacts to n-InP for FET applicationsSolid-State Electronics, 1988
- Sputtered Ni-P as an ohmic contact to n-InP, p-InGaAs and as a diffusion barrierIEEE Transactions on Electron Devices, 1987
- Chemical reactions at the Au/InP interfaceJournal of Materials Research, 1986
- Chemical basis for InP-metal Schottky-barrier formationApplied Physics Letters, 1981