Self-limitation of AlGaN/GaN quantum well energy by built-in polarization field
- 19 April 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (16) , 2361-2363
- https://doi.org/10.1063/1.123851
Abstract
Wurtzite AlGaN/GaN quantum well (QW) structures were grown by molecular beam epitaxy on c-plane sapphire substrates and the QW transition energies were measured by low temperature photoluminescence. Both the well widths and the Al mole fraction in the AlxGa1−xN(0<x<0.3) 100-Å-thick barriers have been varied in order to assess the built-in electric field present in the quantum heterostructures. It is found that the electric field increases linearly with the Al composition. The magnitude of this electric field is as high as 1 MV/cm for an Al mole fraction of 0.27. The main consequence is that whatever the investigated Al composition range, the well thickness must be lower than 30 Å in order to get a transition energy greater than the band gap of GaN.Keywords
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