Quantum-engineering of III–V semiconductor structures
- 31 October 1994
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 92 (1-2) , 63-70
- https://doi.org/10.1016/0038-1098(94)90859-1
Abstract
No abstract availableKeywords
This publication has 34 references indexed in Scilit:
- Fabrication of quantum wires and dots by MOCVD selective growthSolid-State Electronics, 1994
- Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structuresPhysical Review Letters, 1994
- Quantum Cascade LaserScience, 1994
- Excitonic wave function, correlation energy, exchange energy, and oscillator strength in a cubic quantum dotPhysical Review B, 1994
- Miniband formation in asymmetric double-quantum-well superlattice structuresPhysical Review B, 1993
- Surface evolution during molecular-beam epitaxy deposition of GaAsPhysical Review Letters, 1992
- Size effect in parabolic GaAs/As quantum wellsPhysical Review B, 1991
- Broadband 8–12 μm high-sensitivity GaAs quantum well infrared photodetectorApplied Physics Letters, 1989
- Chemical Mapping of Semiconductor Interfaces at Near-Atomic ResolutionPhysical Review Letters, 1989
- Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruptionJournal of Crystal Growth, 1987