Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruption
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4) , 159-163
- https://doi.org/10.1016/0022-0248(87)90384-8
Abstract
No abstract availableKeywords
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