Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature
- 1 November 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (9) , 952-954
- https://doi.org/10.1063/1.95940
Abstract
The interface disorder of quantum wells grown by molecular beam epitaxy at high substrate temperature is investigated by low-temperature photoluminescence. The excitonic emission from a single quantum well is a single sharp peak, and the well width precisely determined from the emission peak energy does not equal to integral multiples of one-monolayer width in almost all samples. These results indicate that the lateral size of growth islands with a one-monolayer height is much smaller than the exciton diameter and a one-monolayer interface acts as a layer with smaller AlAs mole fraction than the barrier layer.Keywords
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