Growth and characterization of Ga1−xInxAs by low pressure metalorganic chemical vapor deposition
- 1 September 1984
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 13 (5) , 779-798
- https://doi.org/10.1007/bf02657926
Abstract
No abstract availableKeywords
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- Low pressure metalorganic chemical vapor deposition of InP and related compoundsJournal of Electronic Materials, 1983
- The carrier mobilities in Ga0.47In0.53as grown by organo-mettalic CVD and liquid-phase epitaxyJournal of Crystal Growth, 1981
- Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxyApplied Physics Letters, 1980
- The thermal-expansion parameters of some GaxIn1−xAsyP1−x alloysApplied Physics Letters, 1979
- Silicon CarbidePublished by Springer Nature ,1971