Breakdown properties of thin oxides in irradiated MOS capacitors
- 1 April 1993
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 33 (5) , 649-657
- https://doi.org/10.1016/0026-2714(93)90271-y
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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