Equilibrium distributions of shallow-level impurity and potential in the near-surface region of a semiconductor in a model with a completely depleted layer

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Abstract
A model of completely depleted layer was used to derive analytical expressions for equilibrium distributions of shallow-level impurity, electric field, and potential in the near-surface region of a semiconductor. The results of calculation were used to estimate the variation in the parameters of a finite-size structure. It was found that, in the approximation used, it was possible to reduce the concentration of electrically active defects by several times for semiconductor layers ∼1 µm thick.