Frequency-dependent transport in glow-discharge amorphous silicon
- 1 November 1986
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 54 (5) , 391-414
- https://doi.org/10.1080/13642818608236856
Abstract
The frequency-dependent conductivity of glow-discharge a-Si:H has been measured in the temperature range 90–350 K. The bulk and interfacial relaxations are separated by measurement. The interfacial relaxation may originate from a Schottky barrier and is interpreted in terms of a trap-released model. The origin of the bulk a.c. loss is discussed in terms of hydrogen-related two-level systems (TLS) and electron transfer between defect states. The bulk a.c. loss can best be explained by the model for tunnelling of atoms.Keywords
This publication has 35 references indexed in Scilit:
- Frequency-dependent conductivity in sputtered amorphous phosphorus thin filmsPhysical Review B, 1985
- Studies of the frequency-dependent admittances of Schottky barriers formed on sputtered hydrogenated amorphous siliconPhilosophical Magazine Part B, 1984
- Effect of annealing and light exposure on the field-effect density of states in glow-discharge a-Si: HPhilosophical Magazine Part B, 1982
- Characterized of glow-discharge deposited a-Si:HSolar Energy Materials, 1980
- Defect creation and hydrogen evolution in amorphous Si:HJournal of Non-Crystalline Solids, 1980
- Capacitance studies on amorphous silicon Schottky barrier diodesJournal of Non-Crystalline Solids, 1980
- Density of States in the Gap of Tetrahedrally Bonded Amorphous SemiconductorsPhysical Review Letters, 1978
- A theory of a.c. conduction in chalcogenide glassesPhilosophical Magazine, 1977
- Anomalous low-temperature thermal properties of glasses and spin glassesPhilosophical Magazine, 1972
- Polarons in crystalline and non-crystalline materialsAdvances in Physics, 1969