On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures
- 1 September 1997
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 12 (9) , 1064-1071
- https://doi.org/10.1088/0268-1242/12/9/002
Abstract
A detailed comparison is made between theory and experiment for the low-temperature mobility of holes in gated oxide, coherently strained Si/SiGe heterostructures. We conclude that the mobility is mainly limited by interface impurities, conventional surface roughness and strain fluctuations; by contrast, we argue that alloy scattering is comparatively weak. Comments regarding possible mobility degradation due to oxide formation are also made.Keywords
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