High-transconductance p -type SiGe modulation-dopedfield-effect transistor
- 13 April 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (8) , 680-681
- https://doi.org/10.1049/el:19950453
Abstract
High-transconductance 1.5 µm-gate-length p-type modulation-doped field-effect transistors (MODFETs) have been fabricated using standard optical lithography on a high hole-mobility SiGe heterostructure grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). A maximum DC extrinsic (intrinsic) transconductance of 95 mS/mm (138 mS/mm) at room temperature has been achieved, which to our knowledge is the highest for p-type field-effect transistors at this gate length. A unity current-gain frequency ft of 2.1 GHz has been measured. The gate leakage current was quite low and was of the order of a few µA/mm. These enhancement-mode devices exhibit reasonable pinch-off characteristics.Keywords
This publication has 8 references indexed in Scilit:
- SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processingIEEE Electron Device Letters, 1994
- High hole mobility in SiGe alloys for device applicationsApplied Physics Letters, 1994
- Fabrication of strain-controlled SiGe/Ge MODFET with ultrahigh hole mobilityIEEE Transactions on Electron Devices, 1994
- SiGe-channel heterojunction p-MOSFET'sIEEE Transactions on Electron Devices, 1994
- High-mobility GeSi PMOS on SIMOXIEEE Electron Device Letters, 1993
- p -type SiGe channel modulation doped field-effect transistors with post-evaporation patterned submicrometre Schottky gatesElectronics Letters, 1993
- Effective mass for strained p-type Si1−xGexJournal of Applied Physics, 1991
- Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOSIEEE Electron Device Letters, 1991