Luminescence Properties of Porous Silicon
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We report the results of a systematic study of the influence of the anodization and etching conditions, and chemical and thermal treatments on the properties of light-emitting porous silicon (PSI). PSI layers with stable, high efficiency photoluminescence (PL) tunable from the near infrared to the yellow have been obtained using p-type and n-type substrates. As the temperature drops below 100 K, the as-anodized PSI layers display striking changes in the PL spectra, which are absent in PSI layers that have received a post-growth treatment.Keywords
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