Spectroscopic identification of Si donors in GaAs
- 15 June 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (12) , 1034-1036
- https://doi.org/10.1063/1.92986
Abstract
Photothermal ionization measurements on Si-doped GaAs grown by molecular beam epitaxy (MBE) have indicated that the previous identification of the Si donor peak was incorrect. Data leading to the new identification are presented and the results leading to the earlier identification are re-examined. Implications of the new identification for the importance of Si as a residual donor in epitaxial GaAs grown by various techniques are discussed.Keywords
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