Silicon as a residual donor in high-purity GaAs
- 15 January 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (2) , 78-80
- https://doi.org/10.1063/1.1655102
Abstract
The question regarding the role of silicon as a residual impurity in high‐purity GaAs is resolved by the use of careful doping experiments and high‐resolution far‐infrared spectroscopy. The results indicate that silicon is readily incorporated into the material as a simple substitutional donor with a binding energy of 5.854 meV and show that silicon is a major, but not necessarily the dominant, residual donor in high‐purity vapor and liquid epitaxial GaAs.Keywords
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