Improved MOSFET short-channel device using germanium implantation

1 July 1988

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 9 (7) , 343-346
https://doi.org/10.1109/55.738

Abstract

Germanium doping in silicon tends to suppress any enhancement in dopant diffusion due to excess point defects. By performing a dual implantation of germanium and the normal source-drain dopant, lateral diffusion of the source-drain profile can be controlled, thus resulting in improved short-channel device behavior.

Keywords

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