Determination of the scattering mechanisms in p-type semiconductors of the III–V group: The case of Zn-doped GaP and natural (undoped) GaSb
- 31 August 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 67 (6) , 651-655
- https://doi.org/10.1016/0038-1098(88)90185-8
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Galvanomagnetic effects in n-type gallium antimonideJournal of Physics and Chemistry of Solids, 1978
- Temperature dependence of the hole mobility in doped p-GaPPhysica Status Solidi (a), 1976
- Scattering mechanisms in p-type GaSb in the temperature range 30–300°KJournal of Physics and Chemistry of Solids, 1973
- Temperature and pressure dependence of the Γ1celectron mobility in GaSbJournal of Physics C: Solid State Physics, 1973
- Semiconductor PhysicsPublished by Springer Nature ,1973
- Intervalley Scattering Selection Rules for Si and GePhysica Status Solidi (b), 1970
- Variation of Electrical Properties with Zn Concentration in GaPJournal of Applied Physics, 1969
- Ion-pairing between lithium and the residual acceptors in GaSbJournal of Physics and Chemistry of Solids, 1965
- Anomalous Mobility Effects in Some Semiconductors and InsulatorsJournal of Applied Physics, 1962
- Electrical Properties of-Type GermaniumPhysical Review B, 1954