Numerical simulation of ZnSe/GaAs interface reflectance difference spectroscopy
- 15 October 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (8) , 4621-4625
- https://doi.org/10.1063/1.363444
Abstract
A numerical method based on the matrices established by Yeh [Optical Waves in Layered Media (Wiley, New York, 1988)] is developed to simulate the non-normal incidence reflectance difference spectroscopy (RDS) spectra of biaxial anisotropic (εx≠εy≠εz) multilayer systems. The main features of the RDS spectra obtained from the biaxial anisotropic ZnSe/GaAs interface are reproduced by the numerical method. It has demonstrated that in the cases of near-normal incidence and when the anisotropy within the layer plane (in-plane anisotropy) is small (εx−εy≪εx) a RDS spectrum can be separated into two spectra, namely, the in-plane anisotropic spectrum and the off-plane anisotropic spectrum. The reflectance of the s wave and the p wave can be calculated separately when the in-plane principal axes are at certain orientations, making it possible to obtain the anisotropic dielectric tensor directly from the measured spectra.This publication has 14 references indexed in Scilit:
- Optical anisotropy and spontaneous ordering inP: An investigation using reflectance-difference spectroscopyPhysical Review B, 1995
- Observation and analysis of epitaxial growth with reflectance-difference spectroscopyMaterials Science and Engineering: B, 1995
- Atomic layer epitaxy of ZnSe using reflectance difference spectroscopyApplied Surface Science, 1994
- Optical anisotropy of singular and vicinal Si–SiO2 interfaces and H-terminated Si surfacesJournal of Vacuum Science & Technology A, 1994
- Relationship among reflectance-difference spectroscopy, surface photoabsorption, and spectroellipsometryApplied Physics Letters, 1993
- Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuumPhysical Review B, 1992
- In situ characterization by reflectance difference spectroscopy of III–V materials and heterojunctions grown by low pressure metal organic chemical vapour depositionMaterials Science and Engineering: B, 1990
- Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAsJournal of Vacuum Science & Technology A, 1988
- Above-bandgap optical anisotropies in cubic semiconductors: A visible–near ultraviolet probe of surfacesJournal of Vacuum Science & Technology B, 1985
- Anisotropies in the Above—Band-Gap Optical Spectra of Cubic SemiconductorsPhysical Review Letters, 1985