Photon Recycling in Double Heterostructures. I. The Case of Perfect Optical Confinement
- 1 September 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 137 (1) , 353-360
- https://doi.org/10.1002/pssb.2221370135
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- On the Chatterjee‐Mitra Transformation for the Electron‐Phonon Interaction ProblemPhysica Status Solidi (b), 1986
- Effect of reabsorbed recombination radiation on the saturation current of direct gap p-n junctionsSolid-State Electronics, 1984
- Direct evidence for photon recycling in p-(Ga,Al)As:Si with a graded band gapJournal of Applied Physics, 1982
- Studies of Surface Recombination Processes in Photo-Excited VPE-GaP:N, TePhysica Status Solidi (a), 1982
- Photon recycling in Ga1−xAlxAs : Si graded-band-gap LED’sJournal of Applied Physics, 1979
- Self-consistent treatment of photon recycling in optical determination of diffusion length and lifetime in GaAs−AlGa1−As heterostructuresJournal of Luminescence, 1979
- Effect of reabsorbed recombination radiation on photoluminescence and photoconductivity in a semi-infinite direct-gap semiconductorPhysica Status Solidi (a), 1978
- Effect of Photon Recycling on Diffusion Length and Internal Quantum Efficiency in AlxGa1-xAs–GaAs HeterostructuresJapanese Journal of Applied Physics, 1977
- Spontaneous Radiative Recombination in SemiconductorsPhysical Review B, 1957
- Photon-Radiative Recombination of Electrons and Holes in GermaniumPhysical Review B, 1954