An experimental 295 MHz CMOS 4K×256 SRAM using bidirectional read/write shared sense amps and self-timed pulsed word-line drivers
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 30 (11) , 1286-1290
- https://doi.org/10.1109/4.475718
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A current-controlled latch sense amplifier and a static power-saving input buffer for low-power architectureIEEE Journal of Solid-State Circuits, 1993
- A 2ns Cycle, 4ns Access 512kb CMOS ECL SRAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991