The p-Inp semiconductor / electrolyte contact under depletion conditions: Impedance, reverse currents and photopotentials
- 30 December 1993
- journal article
- Published by Elsevier in Journal of Electroanalytical Chemistry
- Vol. 362 (1-2) , 97-108
- https://doi.org/10.1016/0022-0728(93)80010-f
Abstract
No abstract availableThis publication has 49 references indexed in Scilit:
- A Comprehensive Investigation of HCl ‐ and Br2 / NH 3 ( aq ) ‐ Etched p ‐ InP InterfacesJournal of the Electrochemical Society, 1990
- Photoelectrochemical reduction of a copper(I) complex to copper metal by hot electrons at p-InPJournal of the American Chemical Society, 1989
- Interfacial Energetics of p ‐ Inp in Acetonitrile SolutionsJournal of the Electrochemical Society, 1988
- Electrical study of Schottky-barrier heights on atomically cleanp-type InP(110) surfacesPhysical Review B, 1987
- Semiconductor electrodes. 59. Photocurrent efficiencies at p-indium phosphide electrodes in aqueous solutionsThe Journal of Physical Chemistry, 1985
- Hot carrier injection of photogenerated electrons at indium phosphide–electrolyte interfacesJournal of Applied Physics, 1983
- Fermi level pinning of p-type semiconducting indium phosphide contacting liquid electrolyte solutions: rationale for efficient photoelectrochemical energy conversionJournal of the American Chemical Society, 1981
- 11.5% solar conversion efficiency in the photocathodically protected p-InP/V3+-V2+-HCI/C semiconductor liquid junction cellApplied Physics Letters, 1981
- Properties of Schottky Barriers on p-Type Indium PhosphideJapanese Journal of Applied Physics, 1980
- Study of the schottky barrier at the n- and p-type indium phosphide electrode/electrolyte interfaceJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1978