Chlorine chemisorption on and the onset of etching of cleaved GaAs(110) at room temperature
- 10 February 1994
- journal article
- Published by Elsevier in Surface Science
- Vol. 303 (1-2) , 89-100
- https://doi.org/10.1016/0039-6028(94)90622-x
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Evidence for precursor‐mediated Cl2 etching of GaAs{110}: Effect of surface temperature and incident translational energy on the reaction probabilityJournal of Vacuum Science & Technology A, 1991
- Supersonic molecular beam study of the trapping of Cl2 on GaAs{110} : dissociative chemisorption and desorptionSurface Science, 1991
- Angle-resolved supersonic molecular beam study of the Cl2/GaAs{110} thermal etching reactionThe Journal of Chemical Physics, 1991
- Doping Effects on the Etching Chemistry of GaAs and SiMRS Proceedings, 1990
- Observation of competing arsenic removal channels in the Cl2+GaAs reactionApplied Physics Letters, 1989
- Pinning of the Fermi level close to the valence-band top by chlorine adsorbed on cleaved GaAs(110) surfacesJournal of Vacuum Science & Technology B, 1987
- The thermal and ion-assisted reactions of GaAs(100) with molecular chlorineJournal of Vacuum Science & Technology B, 1986
- Surface core-level shifts for chlorine covered GaAs (1 1 0) surfacesSolid State Communications, 1985
- Two-dimensional band structure of chemisorbed chlorine on GaAs (110)Physical Review B, 1981
- Chemisorption geometry on cleaved III-V surfaces: Cl on GaAs, GaSb, and InSbPhysical Review B, 1979