Low-temperature in situ cleaning of silicon wafers with an ultra high vacuum compatible plasma source
- 1 December 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 222 (1-2) , 126-131
- https://doi.org/10.1016/0040-6090(92)90052-d
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Plasma cleaned Si analyzed in situ by x-ray photoelectron spectroscopy, secondary ion mass spectrometry, and actinometryJournal of Applied Physics, 1992
- Etching of SiO2 film by synchrotron radiation in hydrogen and its application to low-temperature surface cleaningJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- 370 °C clean for Si molecular beam epitaxy using a HF dipApplied Physics Letters, 1991
- Impact of silicon surface characteristics on MOS device yield for ULSIMicroelectronic Engineering, 1991
- Ultra clean processingMicroelectronic Engineering, 1991
- I n s i t u cleaning of GaAs surfaces using hydrogen dissociated with a remote noble-gas dischargeJournal of Applied Physics, 1990
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990
- Si Surface Cleaning and Epitaxial Growth of GaAs on Si by Electron Cyclotron Resonance Plasma‐Excited Molecular‐Beam‐Epitaxy at Low TemperaturesJournal of the Electrochemical Society, 1989
- I n s i t u cleaning of silicon substrate surfaces by remote plasma-excited hydrogenJournal of Vacuum Science & Technology B, 1989
- Hydrogen plasma etching of semiconductors and their oxidesJournal of Vacuum Science and Technology, 1982