Ultra clean processing
- 1 February 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 10 (3-4) , 163-176
- https://doi.org/10.1016/0167-9317(91)90020-e
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- In situ-doped epitaxial silicon film growth at 250 degrees C by an ultra-clean low-energy bias sputteringPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Formation of High Quality Pure Aluminum Films by Low Kinetic Energy Particle BombardmentJournal of the Electrochemical Society, 1990
- Formation of device-grade epitaxial silicon films at extremely low temperatures by low-energy bias sputteringJournal of Applied Physics, 1989
- Control factor of native oxide growth on silicon in air or in ultrapure waterApplied Physics Letters, 1989
- Crystal structure analysis of epitaxial silicon films formed by a low kinetic energy particle processApplied Physics Letters, 1989
- Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle processApplied Physics Letters, 1989
- Particle-free wafer cleaning and drying technologyIEEE Transactions on Semiconductor Manufacturing, 1989
- Low-temperature silicon epitaxy by low-energy bias sputteringApplied Physics Letters, 1988
- I n s i t u substrate-surface cleaning for very low temperature silicon epitaxy by low-kinetic-energy particle bombardmentApplied Physics Letters, 1988
- Room-temperature copper metallization for ultralarge-scale integrated circuits by a low kinetic-energy particle processApplied Physics Letters, 1988