Field-assisted photoemission to 2.1 microns from a Ag/p-In0.77Ga0.23As photocathode
- 15 April 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (8) , 639-640
- https://doi.org/10.1063/1.91608
Abstract
Reflection‐mode photoemission to a 2.1‐μm threshold has been achieved from an externally biased Ag/p‐In0.77Ga0.23As cathode. Quantum yield at 1.9 μm is 2×10−3 electrons per incident photon for 2.4‐V bias and a cathode cooled to ∼125 K. The cathode was grown by vapor‐phase epitaxy on a compositionally graded InAsP on InP (100) substrate using the hydride process.Keywords
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