Vapor-phase epitaxial growth of InGaAs lattice matched to (100) InP for photodiode application
- 15 November 1979
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (10) , 787-789
- https://doi.org/10.1063/1.90952
Abstract
Vapor‐phase epitaxial growth of In0.53Ga0.47As lattice matched to (100) ‐oriented InP substrates is described, and the performance of photodiodes fabricated from this material is presented. Gas‐flow conditions for lattice‐matched growth with various Ga‐CHl flows were established for growth using the hydride process. The effect of substrate temperature on gas‐flow ratios necessary for lattice‐matched growth was studied over the temperature range 650–750 °C. Growth rates were found to vary from about 8 to about 60 μm/h over this temperature range. The activation energy of surface reaction was determined to be 44 kcal/mole. Photodiodes fabricated from an InP/In0.53Ga0.47As/InP structure showed rise and fall times of ≲1 nsec with quantum efficiencies in excess of 95% at 1.22 μm.Keywords
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