Vapor-phase epitaxial growth of quaternary In1−xGaxAsyP1−y in the 0.75–1.35-eV band-gap range
- 1 May 1979
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (9) , 584-586
- https://doi.org/10.1063/1.90875
Abstract
Growth of In1−xGaxAsyP1−y quaternaries on InP (100) substrates was obtained over the whole band‐gap range 0.75–1.35 eV. Growth conditions and gas flow ratios are described for an open tube VPE of these quaternaries.Keywords
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