Influence of Deposition Temperature on Composition and Growth Rate of GaAsx P1−x Layers
- 1 May 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (5) , 2471-2472
- https://doi.org/10.1063/1.1661533
Abstract
Epitaxial layers of GaAsxP1−x alloys were deposited in an open‐tube vapor‐transport apparatus. It was found that the growth rate and the composition of the deposited alloy strongly depend on the deposition temperature. Higher deposition temperatures lead to an increase in the P content of the alloy. The growth rate reached a maximum at 830°C and then decreased with further decrease in the deposition temperature, contrary to expectations based on the thermodynamics of the growth system. A time‐of‐flight mass spectrometer was coupled to the growth system, and the composition and the chemical reactivity of the vapor species was studied. The results of these studies offer an explanation for the observed dependence of the composition of the deposited alloy on the deposition temperature.This publication has 5 references indexed in Scilit:
- Mass Spectrometric Studies of Vapor Phase Crystal GrowthJournal of the Electrochemical Society, 1971
- Epitaxial GaAs Kinetic Studies: {001} OrientationJournal of the Electrochemical Society, 1970
- The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1969
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- Preparation of GaAs[sub x]P[sub 1−x] by Vapor Phase ReactionJournal of the Electrochemical Society, 1964