Quasi-static RAM design for high performance operation at liquid nitrogen temperature
- 1 December 1990
- journal article
- Published by Elsevier in Cryogenics
- Vol. 30 (12) , 1030-1035
- https://doi.org/10.1016/0011-2275(90)90203-o
Abstract
No abstract availableKeywords
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- Three-transistor-cell 1024-bit 500-ns MOS RAMIEEE Journal of Solid-State Circuits, 1970