Characterization of grain boundaries using deep level transient spectroscopy
- 1 December 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (12) , 8006-8009
- https://doi.org/10.1063/1.325985
Abstract
Using the rectifying characteristics of grain boundaries, modified deep‐level transient spectroscopy (DLTS) and optical deep‐level transient spectroscopy (ODLTS) sensitive techniques have been developed for identification and for quantitative estimation of electron and hole traps in the region of grain boundaries. This method has been used in conjunction with conventional surface oriented Schottky barrier DLTS and ODLTS techniques to show accumulation of native defects, enhanced segregation, and diffusion of copper from the substrate along grain boundaries during epitaxy of GaAs.This publication has 7 references indexed in Scilit:
- Hole traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Identification of the defect state associated with a gallium vacancy in GaAs andPhysical Review B, 1977
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Study of electron traps in n-GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1976
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Grain Boundary Barriers in GermaniumPhysical Review B, 1952