Infrared optical characterization of InAs/Ga1−xInxSb superlattices
- 20 August 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (8) , 801-803
- https://doi.org/10.1063/1.103425
Abstract
InAs/Ga1−xInxSb superlattices have been examined by photoluminescence, photoconductivity, and infrared optical transmission. Samples display clear photoconductive thresholds at energies in agreement with band gaps derived from photoluminescence. Far-infrared energy gaps (8–14 μm and beyond) are obtained for InAs/Ga0.75In0.25Sb superlattices with periods <75 Å, in good agreement with gaps calculated from a simple two-band model. An absorption coefficient of ∼2000 cm−1 at 10 μm is measured in a superlattice with an energy gap of 11.4 μm. The magnitude and shape of this absorption edge is comparable to that of bulk Hg1−xCdxTe, suggesting that infrared detectors based on InAs/Ga1−xInxSb superlattices may be competitive in the 8–14 μm range and beyond.Keywords
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