Dislocation-free silicon-doped gallium arsenide grown by LEC procedure
- 1 October 1983
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 63 (2) , 415-418
- https://doi.org/10.1016/0022-0248(83)90234-8
Abstract
No abstract availableKeywords
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