High-temperature operation of strained Si0.65Ge0.35/Si(111) p-type multiple-quantum-well light-emitting diode grown by solid source Si molecular-beam epitaxy
- 16 August 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (7) , 967-969
- https://doi.org/10.1063/1.109860
Abstract
Electroluminescence (EL) was observed at temperatures up to 60 °C in p‐type strained Si0.65Ge0.35/Si multiple‐quantum‐well (MQW) diode structures grown on Si(111) substrates by Si molecular‐beam epitaxy. No‐phonon line and its transverse optical phonon replica were well‐resolved in the room‐temperature EL spectrum for the first time. EL spectrum was dominated by a broad alloy band located below the band‐edge state by ≊100 meV at lower temperatures, which was taken over by clear band‐edge emissions at elevated temperatures. The emission intensity of the alloy band exhibited a saturation behavior with increasing injection current while the band‐edge emission was found to develop with a power exponent of 1.4.Keywords
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