The Effect of Scanning Electron Beam Annealing on the Reverse Current in Ti-GaAs Schottky Diodes
- 1 April 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (4A) , L704-706
- https://doi.org/10.1143/jjap.27.l704
Abstract
The effects of scanning electron beam annealing of Ti-GaAs Schottky diodes on the reverse diode characteristics are observed and discussed. Significant reductions in the values of the saturation current, the generation current and the shunt current are attributed to the low-energy secondary excitations generated by electron bombardment.Keywords
This publication has 7 references indexed in Scilit:
- Backscattering analysis of electron-beam-induced diffusion of tin in GaAs from dopant emulsionsJournal of Applied Physics, 1987
- Backscattering analysis of AuGe-Ni ohmic contacts of n-GaAsJournal of Applied Physics, 1986
- Improvement in the adhesion of thin films to semiconductors and oxides using electron and photon irradiationApplications of Surface Science, 1985
- SEM alloyed AuGeNi ohmic contacts to GaAsApplications of Surface Science, 1985
- An inexpensive electron beam annealing apparatus with line focus, made from a converted electron welding machineMicroelectronics Journal, 1985
- Photoelectrochemical passivation of GaAs surfacesJournal of Vacuum Science & Technology B, 1983
- Sinusoidal frequency doublerElectronics Letters, 1979