Reactive ion etching of SiGe alloys using HBr
- 15 July 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (3) , 336-338
- https://doi.org/10.1063/1.105588
Abstract
We have studied reactive ion etching of Si1−xGex alloys with x≤0.15 and Ge in HBr plasmas. The etch rate of SiGe increases monotonically with the Ge content of the alloy and for a Si85Ge15 alloy was ≂50% greater than for Si. Etch profiles are identical to those formed in singe-crystal Si. X-ray photoelectron spectroscopy studies shown that the surface of the etched SiGe alloys are depleted in Ge and consist of about one monolayer of brominated Si over the alloy.Keywords
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