The .Si identical to Si3defect at various (111)Si/SiO2and (111)Si/Si3N4interfaces
- 1 December 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (12) , 1000-1011
- https://doi.org/10.1088/0268-1242/4/12/005
Abstract
No abstract availableKeywords
This publication has 64 references indexed in Scilit:
- Effect of processing on the structure of the Si/SiO2 interfaceApplied Physics Letters, 1988
- Theory of thecenter at the Si/interfacePhysical Review B, 1987
- Si→transformation: Interfacial structure and mechanismPhysical Review Letters, 1987
- The structural models of the Si/SiO2 interfaceJournal of Non-Crystalline Solids, 1987
- Dipolar interactions between dangling bonds at the (111) Si-interfacePhysical Review B, 1986
- Probing the transition layer at the SiO2-Si interface using core level photoemissionApplied Physics Letters, 1984
- Si-SiO2 interface structures on Si(100), (111), and (110) surfacesApplied Physics Letters, 1983
- High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Siand the Si-SiInterfacePhysical Review Letters, 1979
- Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPSJournal of Vacuum Science and Technology, 1979
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance IJapanese Journal of Applied Physics, 1971