Spectroscopic ellipsometry applied for in-situ control of lattice matched III-V growth in MOVPE
- 1 February 1998
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 313-314, 496-500
- https://doi.org/10.1016/s0040-6090(97)00871-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Complementary in-situ and post-deposition diagnostics of thin film semiconductor structuresThin Solid Films, 1998
- Real-time monitoring and control of epitaxial semiconductor growth in a production environment by in situ spectroscopic ellipsometryThin Solid Films, 1998
- Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs(001)Applied Physics Letters, 1995
- Study of strain and disorder of InxGa1−xP/(GaAs, graded GaP) (0.25≤x≤0.8) using spectroscopic ellipsometry and Raman spectroscopyJournal of Applied Physics, 1994
- Growth of AlxGa1−xAs parabolic quantum wells by real-time feedback control of compositionApplied Physics Letters, 1992