Growth of AlxGa1−xAs parabolic quantum wells by real-time feedback control of composition
- 9 March 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (10) , 1244-1246
- https://doi.org/10.1063/1.107419
Abstract
Epitaxial AlxGa1−xAs structures whose compositions x vary continuously with thickness according to a given input function have been grown by chemical‐beam epitaxy under closed‐loop ellipsometric control. 200‐ and 500‐Å parabolic quantum wells analyzed by photoreflectance and secondary‐ion mass spectrometry, respectively, show that actual compositions follow target values to within 0.02 in x. Growth of the 200‐Å profile was controlled using compositions ellipsometrically determined for the outermost running 3.1 Å (∼1 monolayer) of depositing material.Keywords
This publication has 10 references indexed in Scilit:
- A direct method to produce and measure compositional grading in AlxGa1−xAs alloysJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Optical control of growth of AlxGa1−xAs by organometallic molecular beam epitaxyApplied Physics Letters, 1990
- Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasersApplied Physics Letters, 1990
- Application of ellipsometry to crystal growth by organometallic molecular beam epitaxyApplied Physics Letters, 1990
- Low-retardance fused-quartz window for real-time optical applications in ultrahigh vacuumJournal of Vacuum Science & Technology A, 1989
- Remotely-doped graded potential well structuresSuperlattices and Microstructures, 1988
- Optical properties of AlxGa1−x AsJournal of Applied Physics, 1986
- Optimum emitter grading for heterojunction bipolar transistorsApplied Physics Letters, 1983
- Methods for drift stabilization and photomultiplier linearization for photometric ellipsometers and polarimetersReview of Scientific Instruments, 1978
- High Precision Scanning EllipsometerApplied Optics, 1975