Application of ellipsometry to crystal growth by organometallic molecular beam epitaxy
- 18 June 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (25) , 2569-2571
- https://doi.org/10.1063/1.102868
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Direct optical measurement of surface dielectric responses: Interrupted growth on (001) GaAsPhysical Review Letters, 1990
- Low-retardance fused-quartz window for real-time optical applications in ultrahigh vacuumJournal of Vacuum Science & Technology A, 1989
- I n s i t u ellipsometry of thin-film deposition: Implications for amorphous and microcrystalline Si growthJournal of Vacuum Science & Technology B, 1989
- Spectroscopic ellipsometry of ultrathin films: From UV to IRThin Solid Films, 1988
- Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)Physical Review Letters, 1987
- In-Situ Ellipsometry and Light Scattering Studies of Substrate Cleaning and Initial Layer Deposition in Low Temperature CVD of Crystalline SiMRS Proceedings, 1987
- Optical properties of thin filmsThin Solid Films, 1982
- Surface analysis during vapour phase growthJournal of Crystal Growth, 1980
- I n s i t u monitoring by ellipsometry of metalorganic epitaxy of GaAlAs-GaAs superlatticeJournal of Applied Physics, 1980
- Ellipsometric assessment of (Ga, Al) As/GaAs epitaxial layers during their growth in an organometallic VPE systemJournal of Crystal Growth, 1979