A high-density and low-power charge-based Hamming network
- 1 March 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Very Large Scale Integration (VLSI) Systems
- Vol. 1 (1) , 56-62
- https://doi.org/10.1109/92.219907
Abstract
A charge-based programmable Hamming neural network circuit is proposed. It utilizes capacitive comparators as processing elements in the feedforward layer, and a multiport charge-sensing amplifier as the MAXNET (or winner-take-all (WTA)) circuit. The CMOS prototype chip contains 10*10 fully interconnected processing elements with the capability of encoding 10 exemplar patterns. The whole circuit occupies a silicon area of 0.414 mm/sup 2/ fabricated in a 2- mu m CMOS technology. The low-silicon area and low-power dissipation are the fundamental properties of the proposed implementation. The experimental results from a prototype chip show robust retrieval and excellent classification properties as theoretically predicted. A modularity methodology and how to extend the prototype chip to VLSI system level integration are examined.<>Keywords
This publication has 11 references indexed in Scilit:
- A modular CMOS design of a Hamming networkIEEE Transactions on Neural Networks, 1992
- MOS implementation of winner-take-all network with application to content-addressable memoryElectronics Letters, 1991
- Pulse-stream VLSI neural networks mixing analog and digital techniquesIEEE Transactions on Neural Networks, 1991
- Artificial neural networks using MOS analog multipliersIEEE Journal of Solid-State Circuits, 1990
- Digital systems for artificial neural networksIEEE Circuits and Devices Magazine, 1989
- A programmable analog neural network chipIEEE Journal of Solid-State Circuits, 1989
- Analysis and reduction of sense-amplifier offsetIEEE Journal of Solid-State Circuits, 1989
- An introduction to computing with neural netsIEEE ASSP Magazine, 1987
- A CMOS associative memory chip based on neural networksPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Charge Transfer in Charge-Coupled DevicesJournal of Applied Physics, 1971