Subnanosecond PCM of GaAs lasers by Gunn-effect switches
- 1 January 1973
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Pulse-code amplitude modulation of GaAs double hetero junction lasers has been achieved at subnanosecond rates by series connecting laser diodes with bistable Gunn-effect switches. Laser-intensity risetimes down to 200 ps and falltimes to 400 ps have been obtained when pulse-code switching occurs between high and low phasing levels.Keywords
This publication has 4 references indexed in Scilit:
- Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operationProceedings of the IEEE, 1972
- Measurement and Interpretation of Long Spontaneous Lifetimes in Double Heterostructure LasersJournal of Applied Physics, 1972
- CW performance of vapor-grown GaAs transferred electron oscillatorsIEEE Transactions on Electron Devices, 1972
- Experimental verification of bistable switching with Gunn diodesElectronics Letters, 1971