High frequency performance of SiC heterojunction bipolar transistors
- 1 July 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (7) , 1092-1097
- https://doi.org/10.1109/16.293335
Abstract
A compact heterojunction bipolar transistor (HBT) model was employed to simulate the high frequency and high power performances of SiC-based bipolar transistors. Potential 6H-SiC/3C-SiC heterojunction bipolar transistors (6H/3C-HBT's) at case temperatures of 27°C (300 K) through 600°C (873 K) were investigated. The high frequency and high power performance was compared to AlGaAs/GaAs HBT's. As expected, the ohmic contact resistance limits the high frequency performance of the SiC HBT. At the present time, it is only possible to reliably produce 1×10-4 Ω-cm2 contact resistances on SiC, so an fT of 4.4 GHz and an fmax of 3.2 GHz are the highest realistic values. However, assuming an incredibly low 1×10-6 Ω-cm2 contact resistance for the emitter, base, and collector terminals, an fT of 31.1 GHz and an fmax of 12.7 GHz can be obtained for a 6H/3C-SiC HBTKeywords
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