Spin-orbit coupling and weak localisation in the 2D inversion layer of indium phosphide
- 20 November 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (32) , L1137-L1145
- https://doi.org/10.1088/0022-3719/15/32/005
Abstract
Reports measurements of the magnetoresistance (MR) of the 2D inversion layer of an InP MOSFET in the temperature range T=4.2 to 0.3K. For kFl>or approximately=5 the authors observe positive MR at low magnetic fields B2. The results do not support a suggestion that the T term can be expressed as Tln(T1/T) where T1 is a constant.Keywords
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