Photoreflectance of single buried Si1−xGex epilayers (0.12<x<0.24)
- 15 September 1995
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (6) , 4285-4287
- https://doi.org/10.1063/1.359829
Abstract
Photoreflectance spectra have been obtained from single strained Si1−xGex epilayers (0.12<xE1 and E1+Δ1 in Si1−xGex and E′0 in silicon and allowed for determination of composition to within x±1.5%.This publication has 11 references indexed in Scilit:
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