Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates
- 1 March 1997
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 26 (3) , 224-231
- https://doi.org/10.1007/s11664-997-0155-z
Abstract
No abstract availableKeywords
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