Lateral spread of high energy P and B ions implanted in silicon along the [100] axis and in random direction
- 30 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1-4) , 593-596
- https://doi.org/10.1016/0167-9317(92)90503-j
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Boron implants in silicon at tilt angles of O degrees and 7 degreesSemiconductor Science and Technology, 1990
- Recent Developments in the Interpretation of Spreading Resistance Profiles for VLSI‐TechnologyJournal of the Electrochemical Society, 1990
- Low resistance ohmic contacts to n- and p-InPSolid-State Electronics, 1981
- Theoretical Considerations on Lateral Spread of Implanted IonsJapanese Journal of Applied Physics, 1972