Boron implants in silicon at tilt angles of O degrees and 7 degrees
- 1 October 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (10) , 1007-1012
- https://doi.org/10.1088/0268-1242/5/10/001
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Deep implants by channeling implantationMaterials Science and Engineering: B, 1989
- Shallow junctions by ion implantation and rapid thermal annealingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Uniform doping of channeled-ion implantationJournal of Applied Physics, 1978
- A review of some charge transport properties of siliconSolid-State Electronics, 1977
- Computer simulation of atomic-displacement cascades in solids in the binary-collision approximationPhysical Review B, 1974
- Channeling and dechanneling of ion-implanted phosphorus in siliconJournal of Applied Physics, 1973